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SE2520L-R Datasheet(PDF) 3 Page - SiGe Semiconductor, Inc.

No. de pieza SE2520L-R
Descripción Electrónicos  RangeCharger 2.4GHz Power Amplifier IC Final
PDF  8 Pages
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Fabricante Electrónico  SIGE [SiGe Semiconductor, Inc.]
Página de inicio  http://www.sige.com
Logo SIGE - SiGe Semiconductor, Inc.

SE2520L-R Datasheet(HTML) 3 Page - SiGe Semiconductor, Inc.

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SE2520L
RangeCharger™ 2.4GHz Power Amplifier IC
Final
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below. This device is ESD sensitive with an ESD rating of < 600V. Handling and assembly of this device
should be at ESD protected workstations.
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage (VCC0, VCC1, VCC2)
-0.3
+3.6
V
VCTL
Control Voltage
-0.3
VCC
V
VEN
Power Amplifier Enable
-0.3
VCC
V
IN
RF Input Power
+8
dBm
TSTG
Storage Temperature Range
-40
+150
°C
Tj
Maximum Junction Temperature
+150
°C
Recommended Operating Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
TA
Operating Temperature
-40
+85
°C
VCC
Supply Voltage
2.7
3.3
3.6
V
DC Electrical Characteristics
Conditions: V
CC0 = VCC1 = VCC2 = VEN = 3.3V, VCTL = 1.6V, PIN = -8dBm, TA = 25°C, f = 2.45GHz, using SiGe
SE2520L-EV1 Evaluation Board.
Symbol
Parameter
Min.
Typ.
Max.
Unit
ICC
Supply Current, VCTL = 1.6V, PIN = -8dBm
110
130
mA
ICC(sat)
Supply Current (sat) @ PIN = 2dBm
140
175
mA
∆IccTEMP
Supply Current variation over temperature from
TA = 25
°C
(-40
°C < TA < +85°C)
25
%
VCTL
PA Output Power Control Voltage Range
0.1
1.6
V
ICTL
Current Sunk by VCTL Pin
60
100
µA
Logic High Voltage
2.0
V
VEN
Logic Low Voltage
0.8
V
ISTBY
Leakage Current when VEN = 0V, VCTL = 0V
0.1
200
µA
15-DST-01 Rev 4.8 Oct 28/02
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