IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTP02N120P

IXTY02N120P

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Pins: 1 - Gate

2 - Drain

TO-220 (IXTP) Outline

TO-252 (IXTY) Outline

Pins: 1 - Gate

2,4 - Drain

3 - Source

Dim.

Millimeter

Inches

Min. Max.

Min.

Max.

A

2.19

2.38

0.086

0.094

A1

0.89

1.14

0.035

0.045

A2

0

0.13

0

0.005

b

0.64

0.89

0.025

0.035

b1

0.76

1.14

0.030

0.045

b2

5.21

5.46

0.205

0.215

c

0.46

0.58

0.018

0.023

c1

0.46

0.58

0.018

0.023

D

5.97

6.22

0.235

0.245

D1

4.32

5.21

0.170

0.205

E

6.35

6.73

0.250

0.265

E1

4.32

5.21

0.170

0.205

e

2.28 BSC

0.090 BSC

e1

4.57 BSC

0.180 BSC

H

9.40 10.42

0.370

0.410

L

0.51

1.02

0.020

0.040

L1

0.64

1.02

0.025

0.040

L2

0.89

1.27

0.035

0.050

L3

2.54

2.92

0.100

0.115

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

0.2

A

I

SM

Repetitive, Pulse Width Limited by T

JM

0.8

A

V

SD

I

1.3

V

t

rr

1.6

μs

I

RM

3.5

A

Q

RM

2.8

μC

I

V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

0.12

0.20

S

C

iss

104

pF

C

oss

V

8.6

pF

C

rss

1.9

pF

t

d(on)

6

ns

t

r

10

ns

t

d(off)

21

ns

t

f

39

ns

Q

g(on)

4.70

nC

Q

gs

V

0.37

nC

Q

gd

3.20

nC

R

thJC

3.8 °C/W

R

thCS

TO-220

0.50

°C/W

Resistive Switching Times

V

R