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STP4403 Datasheet(PDF) 3 Page - Stanson Technology

No. de pieza STP4403
Descripción Electrónicos  STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
PDF  6 Pages
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Fabricante Electrónico  STANSON [Stanson Technology]
Página de inicio  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP4403 Datasheet(HTML) 3 Page - Stanson Technology

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STP
STP
STP
STP4403
4403
4403
4403
P Channel Enhancement Mode MOSFET
-
10.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4403 2010. V1
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-20
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=-250uA
-0.35
-0.9
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±10
0
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=-16V,VGS=0V
-1
uA
VDS=-20V,VGS=0V
TJ=55℃
-10
On-State Drain
Current
ID(on)
VDS=-5V,VGS=-4.5V
-20
A
Drain-source On-
Resistance
RDS(on)
VGS=-4.5V,ID=-10A
VGS=-2.5V,ID=-8.6A
VGS=-1.8V,ID=-7.6A
16
20
28
20
25
35
mΩ
Forward
Transconductance
gfs
VDS=-5.0V,ID=-10A
36
S
Diode Forward Voltage
VSD
IS=-2.5A,VGS=0V
-0.8
-1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Qg
VDS=-10V,VGS=-5V
ID≡-10.0A
30
45
nC
Gate-Source Charge
Qgs
4.5
Gate-Drain Charge
Qgd
8.0
Input Capacitance
Ciss
VDS ==-10V,VGS=0V
f=1MHz
2670
pF
Output Capacitance
Coss
520
Reverse
TransferCapacitance
Crss
480
Turn-On Time
td(on)
tr
VDD=-10V,RL=15Ω
ID=-1A,VGEN=-4.5V
RG=6Ω
25
40
nS
45
70
Turn-Off Time
td(off)
tf
145
240
70
115



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