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IS61WV6416DBLL/DBLS Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc

No. de pieza IS61WV6416DBLL/DBLS
Descripción Electrónicos  64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
PDF  21 Pages
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Fabricante Electrónico  ISSI [Integrated Silicon Solution, Inc]
Página de inicio  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61WV6416DBLL/DBLS Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
11/18/2010
IS61WV6416DALL/DALS, IS61WV6416DBLL/DBLS,
IS64WV6416DBLL/DBLS
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
-20 ns
-25 ns
-35 ns
-45 ns
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Min.
Max.
Unit
trc
ReadCycleTime
20—
25—
35—
45—
ns
tAA
AddressAccessTime
—20
—25
—35
—45
ns
toHA
OutputHoldTime
2.5—
6—
8—
10—
ns
tAce
CE
AccessTime
—20
—25
—35
—45
ns
tdoe
OE
AccessTime
—8
—12
—15
—20
ns
tHzoe(2)
OE
toHigh-ZOutput
08
08
010
0
15
ns
tLzoe(2)
OE
toLow-ZOutput
0—
0—
0—
0
—
ns
tHzce(2
CE
toHigh-ZOutput
08
08
010
0
15
ns
tLzce(2)
CE
toLow-ZOutput
3—
10—
10—
10—
ns
tbA
LB
,UBAccessTime
—8
—25
—35
—45
ns
tHzb
LB
,UBtoHigh-ZOutput
08
08
010
0
15
ns
tLzb
LB
,UBtoLow-ZOutput
0—
0—
0—
0
—
ns
Notes:
1. Testconditionsassumesignaltransitiontimesof1.5nsorless,timingreferencelevelsof1.25V,inputpulselevelsof0.4Vto
Vdd-0.3VandoutputloadingspecifiedinFigure1a.
2. TestedwiththeloadinFigure1b.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. Not100%tested.



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