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SPGP0565A Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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SPGP0565A Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 8 page ![]() Electrical Characteristics ( SenseFET Part ) Symbol Parameter Test Conditions Min Typ Max Units RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.5 A -- 1.35 1.69 Ω On Characteristics Ta=25 C, unless otherwise specified BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 ㎂ 650 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 50 ㎂ VDS = 520 V, TC = 125℃ -- -- 200 ㎂ Off Characteristics Ciss Input Capacitance -- 900 1200 ㎊ Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 900 1200 ㎊ Coss Output Capacitance -- 90 120 ㎊ Crss Reverse Transfer Capacitance -- 11 14.5 ㎊ td(on) Turn-On Time VDS = 325 V, ID = 5.0 A, RG = 25 Ω -- 25 -- ㎱ Tr Turn-On Rise Time -- 25 -- ㎱ td( ff) Turn-Off Delay Time -- 100 -- ㎱ Switching Characteristics (Note 4,5) td(off) Turn Off Delay Time 100 ㎱ tf Turn-Off Fall Time -- 50 -- ㎱ Qg Total Gate Charge VDS = 325V, ID = 5.0 A, VGS = 10 V (Note 4,5) -- 18 24 nC Qgs Gate-Source Charge -- 4.0 -- nC Qgd Gate-Drain Charge -- 6.0 -- nC Notes : 1. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 2. R S 1 ◎ SEMIHOW REV.PLIMILARY” January 2011 |
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