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2N60ZLL-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N60ZLL-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() 2N60ZL Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-830.A ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 2.0 A Drain Current Continuous ID 2.0 A Pulsed (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 140 mJ Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-251/TO-252 PD 44 W Junction Temperature TJ +150 °С Ambient Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-251/TO-252 θJA 100 °С/W Junction to Case TO-251/TO-252 θJc 2.87 °С/W |
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