—2—

DM-231

Equivalent Circuit

1

2

3

4

GND

Basic Performance

1) Operation principle

∗ Device internal structure

(Back of mark face)

1

2

3

4

External magnetic field H

Bias magnetic field

H=14400A/m

Synthetic magnetic field (b)

External magnetic field H

Synthetic

magnetic field (a)

Bias magnetic field

1

2

3

4

2) Power supply pin and output pin

3) Sensitivity direction

231

1

3

2

4

1

Out put

Differential amplifier

GND

2

4

3

Sensitive

Non-Sensitive

Various resistances change according to the direction of

the combnied bias and external magnetic field.

¡) When the direction of the synthetic magnetic field is (a),

¡¡) When the direction of the synthetic magnetic field is (b),

The ferromagnetic magnetoresistance element differs

from the semiconductor magnetoresistance element and

hole element in that it responds only to the magnetic

field within the element's surface. It is not sensitive to

the magnetic field perpendicular to the element.