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BUX84 Datasheet(PDF) 2 Page - Comset Semiconductor

No. de pieza BUX84
Descripción Electrónicos  SILCON DIFFUSED POWER TRANSISTORS
PDF  3 Pages
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Fabricante Electrónico  COMSET [Comset Semiconductor]
Página de inicio  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BUX84 Datasheet(HTML) 2 Page - Comset Semiconductor

  BUX84 Datasheet HTML 1Page - Comset Semiconductor BUX84 Datasheet HTML 2Page - Comset Semiconductor BUX84 Datasheet HTML 3Page - Comset Semiconductor  
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NPN BUX84 – BUX85
26/10/2012
COMSET SEMICONDUCTORS
3/3
ELECTRICAL CHARACTERISTICS (3)
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICES
Collector Cutoff Current(2)
VCEM= VCESmax
VBE=0V
BUX84
-
-
0.2
mA
BUX85
VCEM= VCESmax
VBE=0V
Tj =125° C
BUX84
-
-
1.5
BUX85
IEBO
Emitter Cutoff Current
VBE=5.0 V, IC=0
BUX84
-
-
1
mA
BUX85
VCEOsust
Collector-Emitter sustaining
Voltage
IC=100 mA, IBoff= 0
L=25mH
BUX84
400
-
-
V
BUX85
450
-
-
hFE
DC Current Gain
IC=0.1 A, VCE=5 V
BUX84
30
50
-
-
BUX85
VCE(SAT)
Collector-Emitter saturation
Voltage
IC=0.3 A, IB=30 mA
BUX84
-
-
0.8
V
BUX85
IC=1 A, IB=0.2A
BUX84
-
-
1
BUX85
VBE(SAT)
Base-Emitter saturation
Voltage
IC=1 A, IB=0.2 A
BUX84
-
-
1.1
BUX85
fT
Transition frequency
IC=0.5 A, VCE=10 V
f= 1MHz
BUX84
4
20
-
MHz
BUX85
ton
Turn-on time
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4A
BUX84
-
0.3
0.5
µs
BUX85
TS
Storage time
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4
BUX84
-
2
3.5
BUX85
Tf
Fall Time
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4
BUX84
-
0.4
-
BUX85
Tf
Fall Time
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4
TC=95°
BUX84
-
-
1.4
BUX85
(1) Turn off current
(2) Measured with a half-sinewave (curve tracer)
(3)Puls test : PW =300µs, Duty Cycle< 2%



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