TIP112 datasheet(1/3 Pages) COMSET

No. de pieza	TIP112

Descripción Electrónicos	SILICON DARLINGTON POWER TRANSISTORS

PDF	3 Pages

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Fabricante Electrónico	COMSET [Comset Semiconductor]

Página de inicio	http://comset.halfin.com

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NPN TIP110-111-112

05/10/2012

COMSET SEMICONDUCTORS

1 |3

SEMICONDUCTORS

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe.

They are designed for general purpose amplifier and low-speed switching applications.

PNP complements are TIP115-116-117

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCBO

Collector-Base Voltage

TIP110

60

V

TIP111

80

TIP112

100

VCEO

Collector-Emitter Voltage

TIP110

60

V

TIP111

80

TIP112

100

VEBO

Emitter-Base Voltage

TIP110

5

V

TIP111

TIP112

IC

Collector Current

TIP110

2

A

TIP111

TIP112

ICM

Collector Peak Current

TIP110

4

A

TIP111

TIP112

IB

Base Current

TIP110

50

mA

TIP111

TIP112

PT

Power Dissipation

@ Tc < 25°

TIP110

50

Watts

TIP111

TIP112

@ Ta < 25°

TIP110

2

TIP111

TIP112

TJ

Junction Temperature

TIP110

150

°C

TIP111

TIP112

Ts

Storage Temperature range

TIP110

-65 to +150

TIP111

TIP112

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ON Semiconductor	TIP112	269Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors REV 1
Power Innovations Ltd	TIP112	101Kb / 6P	NPN SILICON POWER DARLINGTONS
STMicroelectronics	TIP112	72Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Jun-1999

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