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OP250GS Datasheet(PDF) 3 Page - Analog Devices

No. de pieza OP250GS
Descripción Electrónicos  CMOS Single-Supply Rail-to-Rail Input/Output Operational Amplifiers
PDF  16 Pages
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Fabricante Electrónico  AD [Analog Devices]
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OP250GS Datasheet(HTML) 3 Page - Analog Devices

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ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Typ
Max
Units
INPUT CHARACTERISTICS
Offset Voltage
VOS
2
7.5
mV
–40
°C < T
A < +125°C20
mV
Input Bias Current
IB
240
pA
–40
°C < T
A < +85
°C60
pA
–40
°C < T
A < +125°C
500
pA
Input Offset Current
IOS
0.5
25
pA
–40
°C < T
A < +125
°C60
pA
Input Voltage Range
05
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 5 V
45
60
dB
–40
°C < T
A < +125
°C40
dB
Large Signal Voltage Gain
AVO
RL = 2 kΩ , Vo = 0.3 V to 4.7 V
1,000
V/mV
Offset Voltage Drift
∆V
OS/
∆T
–40
°C < T
A < +125
°C10
µV/°C
Bias Current Drift
∆I
B/
∆T
1.8
pA/
°C
Offset Current Drift
∆I
OS/∆T
0.07
pA/
°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 100 µA
4.99
V
IL = 10 mA
4.9
4.94
V
–40
°C to +125°CmV
Output Voltage Low
VOL
IL = 100 µA1
V
IL = 10 mA
40
100
mV
–40
°C to +125°C
125
mV
Output Current
IOUT
±100
mA
Open Loop Impedance
ZOUT
f =1 MHz, AV = 1
200
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 6 V
60
80
dB
–40
°C < T
A < +125°C55
dB
Supply Current/Amplifier
ISY
VO = 0 V
800
1,250
µA
–40
°C < T
A < +125
°C
750
1,750
µA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 k
Ω
2.2
V/
µs
Full-Power Bandwidth
BWP
1% Distortion
100
kHz
Settling Time
tS
To 0.01%
3
µs
Gain Bandwidth Product
GBP
1
MHz
Phase Margin
Øo
48
Degrees
Channel Separation
CS
f = 1 kHz, RL = 10 k
Ω
100
dB
NOISE PERFORMANCE
Voltage Noise
en p–p
0.1 Hz to 10 Hz
10
µV p–p
Voltage Noise Density
en
f = 1 kHz
45
nV/
√Hz
f = 10 kHz
30
nV/
√Hz
Current Noise Density
in
f = 1 kHz
0.05
pA/
√Hz
Specifications subject to change without notice.
REV. 0
–3–
OP250/OP450
(VS =
5.0 V, TA =
25 C, VCM =2.5 V unless otherwise noted)



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