MMBR911 datasheet(2/6 Pages) MOTOROLA

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MMBR911LT1

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mA, IB = 0)

V(BR)CEO

—

Vdc

Collector–Base Breakdown Voltage

(IC = 0.1 mA, IE = 0)

V(BR)CBO

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 0.1 mA, IC = 0)

V(BR)EBO

2.0

—

Vdc

Collector Cutoff Current

(VCB = 15 Vdc, IE = 0)

ICBO

—

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 30 mAdc, VCE = 10 Vdc)

hFE

—

200

—

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

1.0

Current Gain–Bandwidth Product

(VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz)

—

6.0

—

GHz

FUNCTIONAL TESTS

Gain @ Noise Figure

(IC = 10 mAdc, VCE = 10 Vdc)

f = 0.5 GHz

f = 1.0 GHz

GNF

—

Noise Figure

(IC = 10 mAdc, VCE = 10 Vdc)

f = 0.5 GHz

f = 1.0 GHz

—

2.0

2.9

—

Figure 1. Current Gain–Bandwidth versus

Collector Current @ 1.0 GHz

IC, COLLECTOR CURRENT (mA)

010

VCE = 10 V

f = 1 GHz

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