TO-247

N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET

D

G

S

ARF440

125W

50V 13.56MHz

ARF441

125W

50V 13.56MHz

THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441.

MAXIMUM RATINGS

All Ratings: T

C

= 25

°C unless otherwise specified.

STATIC ELECTRICAL CHARACTERISTICS

The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

commercial, medical and industrial RF power amplifier applications.

Symbol

BV

DSS

V

DS

(ON)

I

DSS

I

GSS

g

fs

V

GS

(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250

µA)

D

(ON) = 10A, V

GS

= 10V)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125

°C)

Gate-Source Leakage Current (V

GS

=

±30V, V

DS

= 0V)

Forward Transconductance (V

DS

= 10V, I

D

= 5.5A)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 200mA)

MIN

TYP

MAX

150

6

250

1000

±100

45

25

UNIT

Volts

µA

nA

mhos

Volts

Symbol

V

DSS

V

DGO

I

D

V

GS

P

D

T

J

,T

STG

T

L

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

C

= 25

°C

Gate-Source Voltage

Total Power Dissipation @ T

C

= 25

°C

Junction to Case

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF440/441

150

150

11

±30

167

0.75

-55 to 150

300

UNIT

Volts

Amps

Volts

Watts

°C/W

°C

RF OPERATION 1-15MHz

()

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028

FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com