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STTH4R06DEE Datasheet(PDF) 1 Page - STMicroelectronics |
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STTH4R06DEE Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() This is information on a product in full production. September 2012 Doc ID 023262 Rev 1 1/8 8 STTH4R06DEE Turbo 2 ultrafast recovery diode Datasheet production data Features ■ Very low switching losses ■ High frequency and high pulse current operation ■ Low thermal resistance ■ High junction temperature ■ ECOPACK®2 compliant component Description The STTH4R06 series uses ST’s new 600 V planar Pt doping technology. The STTH4R06 is specially suited for switching mode base drive and transistor circuits. Packaged in PowerFLAT™, this device is intended for use in low profile applications. TM: PowerFLAT is a trademark of STMicroelectronics Table 1. Device summary Symbol Value IF(AV) 4 A VRRM 600 V Tj (max) 150 °C VF (typ) 1.0 V TRR (typ) 30 ns A A K A NC A NC A A NC A A A K K PowerFLAT(3.3 x 3.3) STTH4R06DEE-TR www.st.com |
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