BY4_13 datasheet(1/2 Pages) DIOTEC

No. de pieza	BY4

Descripción Electrónicos	High Voltage Silicon Rectifier Diodes

PDF	2 Pages

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Fabricante Electrónico	DIOTEC [Diotec Semiconductor]

Página de inicio	http://www.diotec.com

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BY4 ... BY16

High Voltage Silicon Rectifier Diodes

Silizium-Hochspannungs-Gleichrichterdioden

Version 2013-04-03

Dimensions - Maße [mm]

Nominal current

Nennstrom

0.3 A ... 1 A

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

4000...16000 V

Plastic case

Kunststoffgehäuse

Ø 7.3 x 22 [mm]

Weight approx.

Gewicht ca.

1.9 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in Reel

Standard Lieferform gegurtet auf Rolle

Maximum ratings and Characteristics

Grenz- und Kennwerte

Type

Typ

Rep. peak reverse volt.

Period. Spitzensperrspg.

VRRM [V]

Surge peak reverse volt.

Stoßspitzensperrspg.

VRSM [V]

Max. forward current

Dauergrenzstrom

IFAV [A] 1)

Forward volt.

Durchlass-Spg.

VF [V] 2)

BY4

4000

1.0

< 4.0

BY6

6000

1.0

< 6.0

BY8

8000

0.5

< 8.0

BY12

12000

0.5

< 10.0

BY16

16000

0.3

< 15.0

Leakage Current

Sperrstrom

Tj = 25°C

Tj = 100°C

VR = VRRM

< 1 µA

< 25 µA

Peak forward surge current, 50 Hz half sine-wave

Stoßstrom für eine 50 Hz Sinus-Halbwelle

TA = 25°C

IFSM

30 A

Rating for fusing, t < 10 ms

Grenzlastintegral, t < 10 ms

TA = 25°C

i2t

4.5 A2s

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-50...+150°C

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 25 K/W 1)

1

Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 10 mm from case

Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden

2

At / Bei IFAV,Tj = 25°C

http://www.diotec.com/

1

7.3±0.3

Ø 1.2±0.05

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