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STM32L152C6 Datasheet(PDF) 89 Page - STMicroelectronics

No. de pieza STM32L152C6
Descripción Electrónicos  Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC
PDF  121 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L152C6 Datasheet(HTML) 89 Page - STMicroelectronics

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STM32L151x6/8/B, STM32L152x6/8/B
Electrical characteristics
Doc ID 17659 Rev 8
89/121
Figure 24.
USB timings: definition of data signal rise and fall time
Table 51.
USB DC electrical characteristics
Symbol
Parameter
Conditions
Min.(1)
1.
All the voltages are measured from the local ground potential.
Max.(1)
Unit
Input levels
VDD
USB operating voltage(2)
2.
To be compliant with the USB 2.0 full speed electrical specification, the USB_DP (D+) pin should be pulled
up with a 1.5 k
Ω resistor to a 3.0-to-3.6 V voltage range.
3.0
3.6
V
VDI
(3)
3.
Guaranteed by characterization, not tested in production.
Differential input sensitivity
I(USB_DP, USB_DM)
0.2
V
VCM
(3)
Differential common mode range Includes VDI range
0.8
2.5
VSE
(3)
Single ended receiver threshold
1.3
2.0
Output levels
VOL
(4)
4.
Tested in production.
Static output level low
RL of 1.5 kΩ to 3.6 V
(5)
5.
RL is the load connected on the USB drivers.
0.3
V
VOH
(4)
Static output level high
RL of 15 kΩ to VSS
(5)
2.8
3.6
Table 52.
USB: full speed electrical characteristics
Driver characteristics(1)
1.
Guaranteed by design, not tested in production.
Symbol
Parameter
Conditions
Min
Max
Unit
tr
Rise time(2)
2.
Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF
420
ns
tf
Fall Time(2)
CL = 50 pF
4
20
ns
trfm
Rise/ fall time matching
tr/tf
90
110
%
VCRS
Output signal crossover voltage
1.3
2.0
V
ai14137
tf
Differen tial
Data L ines
VSS
VCRS
tr
Crossover
points



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