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STP10N65K3 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP10N65K3
Descripción Electrónicos  N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
PDF  17 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP10N65K3 Datasheet(HTML) 3 Page - STMicroelectronics

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STF10N65K3, STFI10N65K3, STP10N65K3
Electrical ratings
Doc ID 15732 Rev 3
3/17
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220FP
I2PAKFP
TO-220
VDS
Drain source voltage
650
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
10
A
ID
Drain current (continuous) at TC = 100 °C
6.3
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
40
A
PTOT
Total dissipation at TC = 25 °C
35
150
W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
7.2
A
EAS
Single pulse avalanche energy (2)
2.
Starting Tj = 25 °C, ID = IAR, VDD = 50 V
212
mJ
Derating factor
0.28
1.2
W/°C
dv/dt (3)
3.
ISD ≤ 10 A, di/dt = 100 A/µs, VPeak < V(BR)DSS
Peak diode recovery voltage slope
12
V/ns
ESD
Gate-source human body model (R = 1.5 k
Ω, C =
100 pF)
2.8
kV
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;TC=25 °C)
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220FP
I2PAKFP
TO-220
Rthj-case Thermal resistance junction-case max
3.57
0.83
°C/W
Rthj-amb Thermal resistance junction-ambient max
62.5
°C/W



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