T8T datasheet(2/9 Pages) STMICROELECTRONICS

No. de pieza	T8T

Descripción Electrónicos	Snubberless?? logic level and standard 8 A Triacs

PDF	9 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Characteristics

T8T

2/9

Doc ID 16192 Rev 3

Characteristics

Table 2.

Absolute ratings (limiting values; Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

IT(RMS) On-state rms current (full sine wave)

Tc = 97 °C

ITSM

Non repetitive surge peak on-state current

(full cycle, Tj initial = 25 °C)

F = 50 Hz

tp = 20 ms

F = 60 Hz

tp = 16.7 ms

I²tI²t Value for fusing

tp = 10 ms

A²s

dI/dt

Critical rate of rise of on-state current IG = 2 x IGT

tr ≤ 100 ns

F = 60 Hz

Tj = 125 °C

A/µs

VDSM /

VRSM

Non repetitive surge peak off-state

voltage

tp = 10 ms

Tj = 25 °C

VDRM/VRRM

+ 100

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

PG(AV)

Average gate power dissipation

Tj = 125 °C

Tstg

Storage junction temperature range

- 40 to + 150

°C

Operating junction temperature range

- 40 to + 125

°C

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