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T830-8FP Datasheet(PDF) 5 Page - STMicroelectronics |
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T830-8FP Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 9 page ![]() T830-8FP Characteristics Doc ID 023366 Rev 1 5/9 Figure 11. Relative variation of critical rate of decrease of main current versus junction temperature Figure 12. Relative variation of static dV/dt immunity versus junction temperature (typical values) (dl / dt)c [T ] / [T = 125 °C] jj (dl / dt)c 0 1 2 3 4 5 6 7 25 50 75 100 125 T (°C) j Tj(°C) dV/dt [T j]/ dV/dt [T j=125 °C] 0 1 2 25 50 75 100 125 VD=VR=537V (dV/dt) > 5KV/µs Figure 13. Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values) Figure 14. Relative variation of leakage current versus junction temperature 0.0 0.5 1.0 1.5 1.0 10.0 100.0 (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c Tj =125 °C (dV/dt)c (V/µs) I /I[T ; V/ V ] / I /I DRM RRM j DRM RRM DRM RRM [T j = 125 °C; 800 V] 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 25 50 75 100 125 T (°C) j V = V = 800 V DRM RRM V = V = 600 V DRM RRM V = V = 400 V DRM RRM |
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