RN1101MFV

∼RN1106MFV

2010-03-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101MFV,RN1102MFV,RN1103MFV

RN1104MFV,RN1105MFV,RN1106MFV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2101MFV to RN2106MFV

Equivalent Circuit and Bias Resistor Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1101MFV to 1106MFV

50

V

RN1101MFV to 1104MFV

10

Emitter-base voltage

RN1105MFV, 1106MFV

5

V

Collector current

100

mA

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature range

RN1101MFV to 1106MFV

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1

: Mounted on an FR4 board (25.4 mm

× 25.4 mm × 1.6 mm)

JEDEC

―

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Unit: mm

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101MFV

4.7

4.7

RN1102MFV

10

10

RN1103MFV

22

22

RN1104MFV

47

47

RN1105MFV

2.2

47

RN1106MFV

4.7

47

1

2

3

0.80 ± 0.05

1.2 ± 0.05

1

VESM

1. BASE

2. EMITTER

3. COLLECTOR

0.5

0.45

0.4

0.4

1.15

0.45

0.4

Pad Dimension（Reference）

unit：mm