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LP8543 Datasheet(PDF) 21 Page - Texas Instruments

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No. de pieza LP8543
Descripción Electrónicos  High-Voltage DC/DC Boost Converter With Integrated FET
PDF  40 Pages
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Fabricante Electrónico  TI [Texas Instruments]
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LP8543 Datasheet(HTML) 21 Page - Texas Instruments

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LP8543
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SNVS604D – AUGUST 2009 – REVISED MARCH 2013
Table 5. PWM Frequencies with Phase Shift Disabled (continued)
PWM_MODE = 0
PWM_MODE = 1
PWM_FREQ[2:0] +
PWM Frequency (Hz)
Output Frequency (Hz)
PSPWM_FREQ[1:0]
11101
19531
4808
11110
19531
9766
11111
19531
19531
Device Thermal Regulation
LP8543 has an internal temperature sensor which can be used to measure the junction temperature of the
device and protect the device from overheating. During thermal regulation, LED PWM is reduced by 4% of full
scale per °C whenever the temperature threshold is reached. I.e., with 100% PWM value the PWM goes to 0%
25°C above threshold temperature. With lower PWM start value 0% is reached earlier. Temperature regulation is
enabled automatically when the chip is enabled. 11-bit temperature value can be read from Temp MSB and
Temp LSB registers, MSB should be read first. Temperature limit can be programmed in EEPROM as shown in
the following table.
Table 6. Over Temperature Limit Settings
TEMP_LIM[1:0]
Over Temperature Limit (ºC)
00
100
01
110
10
120
11
130
Figure 15. Internal Temperature Sensor Readings
EEPROM
EEPROM memory stores various parameters for chip control. The 256 bit EEPROM memory is organized as 32
x 8 bits. The EEPROM structure consists of a SRAM front end and the Non-volatile memory (NVM). SRAM data
can be read and written through the serial interface. To erase and write NVM, separate commands need to be
sent. Erase and Write voltages are generated on-chip, no other voltages than normal input voltage are required.
A complete EEPROM memory map is shown in the chapter LP8543 EEPROM Memory Map.
Copyright © 2009–2013, Texas Instruments Incorporated
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