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BAS16LD Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAS16LD Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 11 page ![]() BAS16LD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 12 October 2010 4 of 11 NXP Semiconductors BAS16LD Single high-speed switching diode 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. [2] When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA. [3] When switched from IF =10mA; tr =20ns. Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA --1 V IF = 150 mA --1.25 V IR reverse current VR = 25 V --30 nA VR = 80 V --0.5 μA VR =25V; Tj =150 °C --30 μA VR =80V; Tj =150 °C --50 μA Cd diode capacitance f = 1 MHz; VR = 0 V --1.5 pF trr reverse recovery time [2] --4 ns VFR forward recovery voltage [3] --1.75 V |
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