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STM32F100RC Datasheet(PDF) 38 Page - STMicroelectronics |
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STM32F100RC Datasheet(HTML) 38 Page - STMicroelectronics |
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38 / 98 page ![]() Electrical characteristics STM32F100xC, STM32F100xD, STM32F100xE 38/98 Doc ID 15081 Rev 7 Note: It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and operation 5.3.2 Operating conditions at power-up / power-down Subject to general operating conditions for TA. Table 10. Operating conditions at power-up / power-down P D Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(2) LQFP144 666 mW LQFP100 434 LQFP64 444 TA Ambient temperature for 6 suffix version Maximum power dissipation –40 85 °C Low power dissipation(3) –40 105 Ambient temperature for 7 suffix version Maximum power dissipation –40 105 °C Low power dissipation(3) –40 125 TJ Junction temperature range 6 suffix version –40 105 °C 7 suffix version –40 125 1. When the ADC is used, refer to Table 51: ADC characteristics. 2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 6.2: Thermal characteristics on page 92). 3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 6.2: Thermal characteristics on page 92). Table 9. General operating conditions (continued) Symbol Parameter Conditions Min Max Unit Symbol Parameter Min Max Unit tVDD VDD rise time rate 0 ∞ µs/V VDD fall time rate 20 ∞ |
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