L99H01XP datasheet(16/53 Pages) STMICROELECTRONICS

16 / 53 page

Electrical specifications

L99H01

16/53

DocID15567 Rev 5

Table 14. Gate drivers for external PowerMOS

Item

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Drivers for external high-side PowerMOS

14.1

IGHx(on)

Turn on current

(SOURCE stage)

Tj = 25 °C

(1)

0.3

0.5(2)

0.8

14.2.1

RGHx

On-resistance of

SINK stage

VSHx = 0 V; IGHx = 50 mA;

Tj = 25°C

14.2.2

VSHx = 0 V; IGHx = 50 mA;

Tj = 125°C

4.5

5.3

14.3

VGHxH

Gate on voltage

Outputs floating

VSHx +8 V VSHx +10V VSHx +12V

14.4

RGSHx

Passive Gate

clamp resistance

Drivers for external low-side PowerMOS

14.5

IGLx(on)

Turn on current

(SOURCE stage)

Tj = 25°C

(1)

0.3

0.5(2)

0.8

14.6.1

RGLx

On-resistance of

SINK stage

VSLx = 0 V; IGHx = 50 mA;

Tj = 25°C

14.6.2

VSLx = 0 V; IGHx = 50 mA;

Tj = 125°C

4.5

5.3

14.7

VGLxH

Gate on voltage

VSLx +8 V VSLx +10V VSLx + 12 V

14.8

RGSLx

Passive gate

clamp resistance

Timing of the drivers

14.9

tGHxHL

Propagation delay

time high to low

VVS = 13.5 V; VSHx = 0;

RG =30 Ω; CG =4.7 nF

0.8

1.4

1.9

µs

14.10

tGLxHL

Propagation delay

time low to high

VVS = 13.5 V; VSLx = 0;

RG =30 Ω,; CG =4.7 nF

0.6

1.2

1.8

µs

14.11

tGHxr2

Rise time

VVS = 13.5 V; VSHx = 0;

RG =0 Ω; CG =4.7 nF

170

14.12

tGHxf2

Fall time

VVS = 13.5 V; VSHx = 0;

RG =0 Ω; CG =4.7 nF

210

14.13

tGLxr2

Rise time

VVS = 13.5 V; VSLx = 0;

RG =0 Ω; CG =4.7 nF

170

14.14

tGLxf2

Fall time

VVS = 13.5 V; VSLx = 0;

RG =0 Ω; CG =4.7 nF

210

Indirect measurement, parameter measured dynamically using 100 nF load capacitor and evaluating the slew rate.

Average value.

L99H01XP Datasheet(PDF) 16 Page - STMicroelectronics

L99H01XP Datasheet(HTML) 16 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

Datasheet Descarga

Enlace URL