2004 Jan 14

2

NXP Semiconductors

Product data sheet

High-speed double diode

BAV74

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage: max. 50 V

• Repetitive peak reverse voltage: max. 60 V

• Repetitive peak forward current: max. 450 mA.

APPLICATIONS

• High-speed switching in thick and thin-film circuits.

DESCRIPTION

The BAV74 consists of two high-speed switching diodes

with common cathodes, fabricated in planar technology,

and encapsulated in a small SOT23 plastic SMD package.

MARKING

Note

1.

* = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W: Made in China.

PINNING

TYPE NUMBER

MARKING CODE(1)

BAV74

JA*

PIN

DESCRIPTION

1

anode (a1)

2

anode (a2)

3

cathode

Fig.1 Simplified outline (SOT23) and symbol.

lumns

21

3

Top view

MAM108

21

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

repetitive peak reverse

voltage

−

60

V

continuous reverse voltage

−

50

V

continuous forward current

single diode loaded; note 1; see Fig.2

−

215

mA

double diode loaded; note 1; see Fig.2

−

125

mA

repetitive peak forward current

−

450

mA

non-repetitive peak forward

current

t = 1

µs

−

4

A

t = 1 ms

−

1

A

t = 1 s

−

0.5

A

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C