IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA02N250 IXTH02N250

IXTV02N250S

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

88

145

mS

C

iss

116

pF

C

oss

V

8

pF

C

rss

3

pF

t

d(on)

19

ns

t

r

19

ns

t

d(off)

32

ns

t

f

33

ns

Q

g(on)

7.4

nC

Q

gs

V

0.7

nC

Q

gd

5.3

nC

R

thJC

1.5

°C/W

R

thCS

TO-247 & PLUS220

0.25

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

200 mA

I

SM

Repetitive, Pulse Width Limited by T

JM

800 mA

V

SD

I

2.0

V

t

rr

1.5

μs

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times

V

R

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

TO-247 Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

I

PLUS220SMD Outline

1. Gate

2. Drain

3. Source 4. Drain

E

E1

D

L2

A

A1

L1

L

L3

e

2X b

c

A2

L4

A3

E1

Note

1. Pulse test, t

*Additional provisions for lead to lead voltage isolation are required at V

PIN: 1 - Gate

2 - Drain

3 - Source

TO-263 Outline