L6565D datasheet(3/17 Pages) STMICROELECTRONICS

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L6565

THERMAL DATA

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

SO8

Minidip

Unit

Rth j-amb

Max. Thermal Resistance, Junction-to-ambient

150

100

°C/W

Symbol

Parameter

Value

Unit

IVcc

8ICC + IZ

IGD

Output Totem Pole Peak Current (2 µs)

±700

INV, COMP,

VFF, CS

1, 2, 3 4

Analog Inputs & Outputs

-0.3 to 7

IZCD

Zero Current Detector

50 (source)

-10 (sink)

Ptot

Power Dissipation @Tamb = 50°C

(Minidip)

(SO8)

0.65

Junction Temperature Operating range

-40 to 150

°C

Tstg

Storage Temperature

-55 to 150

°C

ELECTRICAL CHARACTERISTCS

(Tj = -25 to 125°C, VCC = 12V, Co = 1nF; unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

SUPPLY VOLTAGE

Vcc

Operating range

After turn-on

10.3

VCCOn

Turn-on threshold

12.5

13.5

14.5

VCCOff

Turn-off threshold

8.7

9.5

10.3

Hys

Hysteresis

3.65

4.3

Zener Voltage

Icc = 25 mA

SUPPLY CURRENT

Istart-up

Start-up Current

Before turn-on, VCC = 12V

µA

Quiescent Current

After turn-on

2.3

3.5

ICC

Operating Supply Current

@ 70 kHz

3.5

Quiescent Current

During Hiccup-mode OCP

1.6

3.5

Quiescent Current

VZCD < VDIS, VCC>VCCOff

1.4

2.1

LINE FEEDFORWARD

IVFF

Input Bias Current

VVFF = 0 to 3 V

-1

µA

VVFF

Operating Range

0 to 3

Gain

VVFF = 1.5V, VCOMP = 4V

0.16

ERROR AMPLIFIER

VINV

Voltage Feedback Input

Threshold

Tamb = 25°C

2.465

2.5

2.535

12V < VCC < 18V

2.44

2.56

Line Regulation

Vcc = 12 to 18V

IINV

Input Bias Current

-0.1

-1

µA

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