UPD166019T1F datasheet(9/18 Pages) RENESAS

No. de pieza	UPD166019T1F

Descripción Electrónicos	Single P-Channel High-Side Intelligent Power Device

PDF	18 Pages

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

Página de inicio	http://www.renesas.com

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9 / 18 page

PD166019T1F

Preliminary

R07DS0730EJ0100 Rev.1.00

Page 9 of 16

Apr 25, 2012

Device Behavior at Low Voltage Condition

If the supply voltage, VCC goes down under VCIN(UV), The device shuts down the output. If the supply voltage, VCC

increase over VCIN(ST), the device turns on the output automatically. The device keeps off-state if supply voltage, VCC

does not increase over VCIN(ST) after under voltage shutdown.

VIN

VOUT/VCC

VBAT

VOUT

VCC

VCIN(UV)

VCIN(ST)

Loss of Ground Protection

In case of complete loss of the device ground connection, but connected load ground, the device securely changes to

off-state by low voltage detector. In loss of ground condition voltage of internal circuit is as below. Thus RIN should be

bigger than 40 k

 to activate this function.

Internal circuit voltage = VCC – Ion  (RIN + 100 ) – Vf

Low voltage detection voltage: VCIN(UV)

Even though there is possibility to keep on state if RIN is lower than 40 k, output MOSFET is secured in full on state

by circuit design.

VCC

GND

Internal

Circuit

Ion

Ion: Circuit current, 300 μA min

100

RIN

Low Voltage

Detector

UPD166019T1F Datasheet(PDF) 9 Page - Renesas Technology Corp