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STP80NF06 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP80NF06 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STP80NF06 - STB80NF06 - STW80NF06 Electrical characteristics 5/14 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 320 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 80A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, VDD = 50V di/dt = 100A/µs, Tj = 150°C (see Figure 15) 80 250 6.4 ns nC A |
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