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N0801R Datasheet(PDF) 3 Page - Renesas Technology Corp |
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N0801R Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 5 page ![]() N0801R R07DS0728EJ0100 Rev.1.00 Page 3 of 5 Mar 30, 2012 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE −0.0001 −0.001 −0.01 −0.1 −1 −10 TA = 125˚C 25˚C −25˚C VBE - Base to Emitter Voltage - (V) −0.0 −0.3 −0.6 −0.9 −1.2 VCE = −2 V Pulsed GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 100 1000 VCE = −5 V −1000 −100 −10 −1 IC - Collector Current - (mA) OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1 10 100 −100 −10 −1 −0.1 VCB - Collector to Base Voltage - (V) IE = 0 f = 1.0 MHz SWITCHING TIME vs. COLLECTOR CURRENT 10 100 1000 IC - Collector Current - (mA) −10 −100 −1000 −10000 VCE = −10 V IC = 10IB1 = −10IB2 PW = 50 μs ton tf tstg |
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