BC858A datasheet(3/11 Pages) INFINEON

3 / 11 page

2011-09-19

BC857...-BC860...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC857..., BC860...

IC = 10 mA, IB = 0 , BC858..., BC859...

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC857..., BC860...

IC = 10 µA, IE = 0 , BC858..., BC859...

V(BR)CBO

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

V(BR)EBO

Collector-base cutoff current

VCB = 45 V, IE = 0

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

0.015

µA

DC current gain1)

IC = 10 µA, VCE = 5 V, hFE-grp.A

IC = 10 µA, VCE = 5 V, hFE-grp.B

IC = 10 µA, VCE = 5 V, hFE-grp.C

IC = 2 mA, VCE = 5 V, hFE-grp.A

IC = 2 mA, VCE = 5 V, hFE-grp.B

IC = 2 mA, VCE = 5 V, hFE-grp.C

hFE

125

220

420

140

250

480

180

290

520

250

475

800

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

250

300

650

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

700

850

Base-emitter voltage1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

650

750

820

1Pulse test: t < 300µs; D < 2%

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