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RN4985 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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RN4985 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page ![]() RN4985 2007-11-01 3 Q1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit ICBO ― VCB = 50V, IE = 0 ― ― 100 Collector cut-off current ICEO ― VCE = 50V, IB = 0 ― ― 500 nA Emitter cut-off current IEBO ― VEB = 5V, IC = 0 0.078 ― 0.145 mA DC current gain hFE ― VCE = 5V, IC = 10mA 80 ― ― ― Collector-emitter saturation voltage VCE (sat) ― IC = 5mA, IB = 0.25mA ― 0.1 0.3 V Input voltage (ON) VI (ON) ― VCE = 0.2V, IC = 5mA 0.6 ― 1.1 V Input voltage (OFF) VI (OFF) ― VCE = 5V, IC = 0.1mA 0.5 ― 0.8 V Transition frequency fT ― VCE = 10V, IC = 5mA ― 250 ― MHz Collector output capacitance Cob ― VCB = 10V, IE = 0, f = 1 MHz ― 3 6 pF Q2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit ICBO ― VCB = −50V, IE = 0 ― ― −100 Collector cut-off current ICEO ― VCE = −50V, IB = 0 ― ― −500 nA Emitter cut-off current IEBO ― VEB = −5V, IC = 0 −0.078 ― −0.145 mA DC current gain hFE ― VCE = −5V, IC = −10mA 80 ― ― ― Collector-emitter saturation voltage VCE (sat) ― IC = −5mA, IB = −0.25mA ― −0.1 −0.3 V Input voltage (ON) VI (ON) ― VCE = −0.2V, IC = −5mA −0.6 ― −1.1 V Input voltage (OFF) VI (OFF) ― VCE = −5V, IC = −0.1mA −0.5 ― −0.8 V Transition frequency fT ― VCE = −10V, IC = −5mA ― 200 ― MHz Collector output capacitance Cob ― VCB = −10V, IE = 0 ― 3 6 pF Q1, Q2 Common Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circui t Test Condition Min Typ. Max Unit Input resistor R1 ― ― 1.54 2.2 2.86 kΩ Resistor ratio R1/R2 ― ― 0.0421 0.0468 0.0515 ― |
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