STPS20200C datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Characteristics

STPS20200C

4/15

DocID024382 Rev 2

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Forward voltage drop versus forward

current (per diode)

(W)

F(AV)

234

567

δ=tp/T

δ = 1

δ = 0.1

δ = 0.05

δ = 0.5

δ = 0.2

(A)

F(AV)

IFM(A)

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

(Maximum values)

(Typical values)

(Maximum values)

Tj = 25 °C

Tj = 125 °C

(Typical values)

VFM(V)

Figure 3. Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

Figure 4. Junction capacitance versus reverse

voltage applied (typical values, per diode)

I (mA)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

100

120

140

160

180

200

j=150°C

j=125°C

j=25°C

j=100°C

j=50°C

j=75°C

V (V)

C(pF)

100

1000

100

1000

F=1MHz

OSC=30mVRMS

j=25°C

V(V)

Figure 5. Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 6. Relative variation of thermal

impedance junction to case versus pulse

duration (TO-220FPAB)

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

TO-220AB / TO-220AB narrow leads / D²PAK

t (s)

δ=tp/T

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

Single pulse

t (s)

δ=tp/T

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