STPS20200CT datasheet(2/15 Pages) STMICROELECTRONICS

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Characteristics

STPS20200C

2/15

DocID024382 Rev 2

Characteristics

General formula to calculate TJ(diode1) and TJ(diode2):

Tj(diode1) = P(diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c) + Tcase

Tj(diode2) = P(diode2) x Rth(j-c)(per diode) + P(diode1) x Rth(c) + Tcase

Table 2. Absolute ratings (limiting values, per diode, unless otherwise stated)

Symbol

Parameter

Value

Uni

VRRM

Repetitive peak reverse voltage

200

IF(RMS) Forward rms current

IF(AV)

Average forward current,

δ = 0.5,

square wave

TO-220AB, D2PAK,

TO 220AB narrow leads

Tc = 160 °C Per device

TO-220FPAB

Tc = 105 °C Per device

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal, Tamb = 25 °C

180

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature range(1)

-40 to +175

°C

condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

D2PAK, TO-220AB,TO-220AB narrow leads

Per diode

Per device

1.30

0.75

°C/W

TO-220FPAB

Per diode

Per device

5.00

4.15

Rth(c)

Coupling

D2PAK, TO-220AB, TO-220AB narrow leads

0.20

TO-220FPAB

3.30

dP tot

dTj

---------------

Rth j

–

()

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