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MP2497DN Datasheet(PDF) 2 Page - Monolithic Power Systems

No. de pieza MP2497DN
Descripción Electrónicos  3A, 50V, 100kHz Step-Down Converter with Programmable Output OVP Threshold
PDF  14 Pages
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Fabricante Electrónico  MPS [Monolithic Power Systems]
Página de inicio  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP2497DN Datasheet(HTML) 2 Page - Monolithic Power Systems

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MP2497 – 3A, 50V, 100kHz STEP-DOWN CONVERTER
MP2497 Rev. 1.12
www.MonolithicPower.com
2
12/22/2011
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2011 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number
Package
Top Marking
Operating Temperature (TJ)
MP2497DS*
SOIC8
MP2497
-40
°C to +125°C
MP2497DN**
SOIC8E
MP2497
-40
°C to +125°C
* For Tape & Reel, add suffix –Z (e.g. MP2497DS–Z);
For RoHS, compliant packaging, add suffix –LF (e.g. MP2497DS–LF–Z).
** For Tape & Reel, add suffix –Z (e.g. MP2497DN–Z);
For RoHS, compliant packaging, add suffix –LF (e.g. MP2497DN–LF–Z).
PACKAGE REFERENCE
SOIC8
SOIC8E
ABSOLUTE MAXIMUM RATINGS (1)
Input Voltage VIN .......................................... 60V
VISN, VISP ..............................................0V to 25V
|VISN -VISP| ...........................................0V to 0.4V
VSW........................................-0.3V to VIN + 0.3V
VBST ................................................... VSW + 6.5V
All Other Pins...............................-0.3V to +6.5V
Junction Temperature...............................150
°C
Lead Temperature ....................................260
°C
Storage Temperature............... -65
°C to +150°C
Continuous Power Dissipation (TA = +25°C)
(2)
SOIC8 ...................................................... 1.38W
SOIC8E...................................................... 2.5W
Recommended Operating Conditions
(3)
Input Voltage VIN ..............................4.5V to 50V
Output Voltage VOUT (VIN>26.5V) .....0.8V to 25V
Output Voltage VOUT (VIN<=26.5V) ......................
.........................................0.8V to (VIN–1.5)V
Maximum Junction Temp. (TJ) ................+125°C
Thermal Resistance
(4)
θJA
θJC
SOIC8..................................... 90 ...... 45...
°C/W
SOIC8E .................................. 50 ...... 10...
°C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ (MAX), the junction-to-
ambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD (MAX) = (TJ
(MAX)-TA)/θJA. Exceeding the maximum allowable power
dissipation will cause excessive die temperature, and the
regulator will go into thermal shutdown. Internal thermal
shutdown circuitry protects the device from permanent
damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB.



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