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STGF20H60DF Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STGF20H60DF
Descripción Electrónicos  600 V, 20 A high speed trench gate field-stop IGBT
PDF  22 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF20H60DF Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGB20H60DF, STGF20H60DF, STGP20H60DF
4/22
DocID023740 Rev 4
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
600
V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 20 A
1.6
2.0
V
V
GE
= 15 V, I
C
= 20 A
T
J
= 125 °C
1.75
V
GE
= 15 V, I
C
= 20 A
T
J
= 175 °C
1.8
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 1 mA
5.0
6.0
7.0
V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
25
μA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20 V
250
nA
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-2750
-
pF
C
oes
Output capacitance
-
110
-
pF
C
res
Reverse transfer
capacitance
-65
-
pF
Q
g
Total gate charge
V
CC
= 400 V, I
C
= 20 A,
V
GE
= 15 V
-115
-
nC
Q
ge
Gate-emitter charge
-
22
-
nC
Q
gc
Gate-collector charge
-
45
-
nC



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