2SD882 datasheet(3/8 Pages) STMICROELECTRONICS

No. de pieza	2SD882

Descripción Electrónicos	NPN medium power transistor

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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2SD882

Electrical characteristics

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Electrical characteristics

(TCASE = 25°C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 60 V

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 30 V

100

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

µA

V(BR)CEO

(1)

Collector-emitter breakdown

voltage

(IB = 0 )

IC = 10 mA

V(BR)CBO

Collector-base breakdown

voltage

(IE = 0 )

IC = 100 µA

V(BR)EBO

Emitter-base breakdown

voltage

(IC = 0 )

IE = 100 µA

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 1 A

IB = 50 mA

IC = 2 A

IB = 100 mA

IC = 3 A

IB = 150 mA

0.4

0.7

1.1

VBE(sat)

(1)

Pulsed duration = 300 ms, duty cycle

≤1.5%.

Base-emitter saturation

voltage

IC = 2 A

IB = 100 mA

1.2

hFE

DC current gain

IC = 100 mA

VCE = 2 V

IC = 1 A

VCE = 2 V

IC = 3 A

VCE = 2 V

100

300

Transition frequency

IC = 0.1 A

VCE = 10 V

100

MHz

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