CSD13381F4 datasheet(4/9 Pages) TI1

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0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

−75

−25

125

175

TC - Case Temperature (ºC)

VGS = 1.8V

VGS = 4.5V

ID =0.5A

G001

0.0001

0.001

0.01

0.1

0.2

0.4

0.6

0.8

VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

0.4

0.5

0.6

0.7

0.8

0.9

1.1

1.2

−75

−25

125

175

TC - Case Temperature (ºC)

ID = 250uA

G001

100

120

140

160

180

200

220

240

260

280

300

VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 0.5A

TC = 125ºC Id = 0.5A

G001

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

Qg - Gate Charge (nC)

ID = 0.5A

VDS = 6V

G001

100

1000

VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD13381F4

SLPS448A – JULY 2013 – REVISED NOVEMBER 2013

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

Figure 4. Gate Charge

Figure 5. Capacitance

TEXT ADDED FOR SPACING

Figure 6. Threshold Voltage vs. Temperature

Figure 7. On-State Resistance vs. Gate-to-Source Voltage

TEXT ADDED FOR SPACING

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

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