TC4467CJD datasheet(3/22 Pages) MICROCHIP

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 2002 Microchip Technology Inc.

DS21425B-page 3

TC4467/TC4468/TC4469

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

Supply Voltage ...............................................................+20 V

Input Voltage ............................. (GND – 5 V) to (VDD + 0.3 V)

Package Power Dissipation: (TA ≤ 70°C)

PDIP...................................................................800 mW

CERDIP .............................................................840 mW

SOIC ..................................................................760 mW

Package Thermal Resistance:

CERDIP RθJ-A ...................................................100°C/W

CERDIP RθJ-C.....................................................23°C/W

PDIP RθJ-A ..........................................................80°C/W

PDIP RθJ-C..........................................................35°C/W

SOIC RθJ-A..........................................................95°C/W

SOIC RθJ-C..........................................................28°C/W

Operating Temperature Range:

C Version ................................................... 0°C to +70°C

E Version.................................................-40°C to +85°C

M Version ..............................................-55°C to +125°C

Maximum Chip Temperature....................................... +150°C

Storage Temperature Range.........................-65°C to +150°C

†Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operation listings of this specification is not implied. Exposure

to maximum rating conditions for extended periods may affect

device reliability.

ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise noted, TA = +25°C, with 4.5 V ≤ VDD ≤ 18 V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input

Logic 1, High Input Voltage

VIH

2.4

—

VDD

Note 3

Logic 0, Low Input Voltage

VIL

——

0.8

Note 3

Input Current

IIN

-1.0

—

+1.0

µA

0 V

≤ VIN ≤ VDD

Output

High Output Voltage

VOH

VDD – 0.025

—

ILOAD = 100 µA (Note 1)

Low Output Voltage

VOL

—

0.15

ILOAD = 10 mA (Note 1)

Output Resistance

—10

Ω

IOUT = 10 mA, VDD = 18 V

Peak Output Current

IPK

—1.2

—

Continuous Output Current

IDC

—

300

Single Output

—

500

Total Package

Latch-Up Protection Withstand

Reverse Current

I—

500

—

4.5 V

≤ VDD ≤ 16 V

Switching Time (Note 1)

Rise Time

—

nsec

Figure 4-1

Fall Time

—

nsec

Figure 4-1

Delay Time

tD1

—

nsec

Figure 4-1

Delay Time

tD2

—

nsec

Figure 4-1

Power Supply

Power Supply Current

—1.5

Power Supply Voltage

VDD

4.5

—

Note 2

Note

Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to

drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching

times are ensured by design.

When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt

will cause high-power dissipation in the device.

The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5µsec

to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below

the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.

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