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SST211 Datasheet(PDF) 2 Page - Calogic, LLC

No. de pieza SST211
Descripción Electrónicos  FAST DMOS FET Switches N-Channel Enhancement-Mode
PDF  2 Pages
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Fabricante Electrónico  CALOGIC [Calogic, LLC]
Página de inicio  http://www.calogic.net
Logo CALOGIC - Calogic, LLC

SST211 Datasheet(HTML) 2 Page - Calogic, LLC

  SST211 Datasheet HTML 1Page - Calogic, LLC SST211 Datasheet HTML 2Page - Calogic, LLC  
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SST211 / SST213 / SST215
CORPORATION
ABSOLUTE MAXIMUM RATINGS (Tc = +25
oC unless otherwise noted)
Parameter
Breakdown Voltages
SST211
SST213
SST215
Unit
VDS
+30
+10
+20
V
VSD
+10
+10
+20
V
VDB
+30
+15
+25
V
VSB
+15
+15
+25
V
VGS
-15
-15
-25
V
+25
+25
+30
V
VGB
-0.3
-0.3
-0.3
V
+25
+25
+30
V
VGD
-30
-15
-25
V
+25
+25
+30
V
ID
Continous Drain Current . . . . . . . . . . . . . . . . . . . . . 50mA
Tj
Operating Junction Temperature Range . . -55 to +125
oC
PT Power Dissipation (at or below Tc = +25
oC) . . . . 360mW
TS Storage Temperature Range . . . . . . . . . . . -55 to +150
oC
Linear Derating Factor3.6mW/
o
ELECTRICAL CHARACTERISTICS (Tc = +25
oC unless otherwise noted)
SYMBOL
CHARACTERISTICS
SST211
SST213
SST215
UNIT
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
STATIC
BVDS
Drain-Source
Breakdown Voltage
30
35
V
ID = 10
µA, VGS = VBS = 0
10
25
10
25
20
25
ID = 10nA, VGS = VBS = -5V
BVSD
Source-Drain Breakdown Voltage
10
10
20
IS = 10nA, VGD = VBD = -5V
BVDB
Drain-Body
Breakdown Voltage
15
15
25
ID = 10nA, VGB = 0 Source
OPEN
BVSB
Source-Body
Breakdown Voltage
15
15
25
IS = 10
µA, VGB = 0 Drain OPEN
ID(OFF)
Drain-Source
OFF Current
0.2
10
0.2
10
nA
VDS = 10V
VGS = VBS = -5V
0.2
10
VDS = 20V
IS(OFF)
Source-Drain
OFF Current
0.6
10
0.6
10
VSD = 10V
VGD = VBD = -5V
0.6
10
VSD = 20V
IGBS
Gate-Body
Leakage Current
10
10
µA
VGB = 25V
VDB = VSB = 0
10
VGB = 30V
VGS(th)
Gate Threshold Voltage
0.5
1.0
2.0
0.1
2.0
0.1
1.0
2.0
V
VDS = VGS, ID = 1
µA, VSB = 0
rds(on)
Drain-Source
1
ON Resistance
50
70
50
70
50
70
ohms
VGS = 5V
ID = 1mA
VSB = 0
30
45
30
45
30
45
VGS = 10V
DYNAMIC
gfs
Common-Source
1
Foward Transcond.
10
12
10
12
10
12
mS
VDS = 10V, ID = 20mA
f = 1KHz, VSB = 0
C(gs + gd + gb)
Gate Node Capacitance
2.4
3.5
2.4
3.5
2.4
3.5
pF
VDS = 10V
VGS = VBS = -15V
f = 1MHz
C(gd + db)
Drain Node Capacitance
1.3
1.5
1.3
1.5
1.3
1.5
C(gs + sb)
Source Node Capacitance
3.5
4.0
3.5
4.0
3.5
4.0
C(dg)
Reverse Transfer Capacitance
0.3
0.5
0.3
0.5
0.3
0.5
td(ON)
Turn ON Delay Time
0.7
1.0
0.7
1.0
0.7
1.0
ns
VDD = 5V, VG(ON) = 10V
RL = 680, RG = 51
tr
Rise Time
0.8
1.0
0.8
1.0
0.8
1.0
t(OFF)
Turn OFF Time
10
10
10
NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle
Typical Performance Characteristics: See SD211-215 Series



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