BAS56 datasheet(1/2 Pages) CENTRAL

No. de pieza	BAS56

Descripción Electrónicos	DUAL HIGH CURRENT SWITCHING DIODE

PDF	2 Pages

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Fabricante Electrónico	CENTRAL [Central Semiconductor Corp]

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60

Central

Semiconductor Corp.

TM

SOT-143 CASE

BAS56

DUAL HIGH CURRENT

SWITCHING DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BAS56

type is an ultra-high speed silicon switching

diode manufactured by the epitaxial planar

process, in an epoxy molded surface mount

package with isolated dual diodes, designed

for high current, high speed switching

applications.

Marking code is L51.

MAXIMUM RATINGS (TA=25

oC)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

60

V

Peak Repetitive Reverse Voltage

VRRM

60

V

Continuous Forward Current

IF

200

mA

Peak Repetitive Forward Current

IFRM

600

mA

Forward Surge Current, tp=1

µsec.

IFSM

4000

mA

Forward Surge Current, tp=1 sec.

IFSM

1000

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

oC

Thermal Resistance

ΘJA

357

oC/W

ELECTRICAL CHARACTERISTICS (TA=25

oC unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=60V

100

nA

IR

VR=60V, TA=150

oC

100

µA

IR

VR=75V

10

µA

VF

IF=10mA

0.75

V

VF

IF=200mA

1.00

V

VF

IF=500mA

1.25

V

CT

VR=0, f=1 MHz

2.5

pF

trr

IF=IR=400mA, RL=100Ω, Rec. to 40mA

6.0

ns

Qs

IF=10mA, VR=5.0V, RL=500Ω

50

pC

VFR

IF=400mA, tr=30ns

1.2

V

VFR

IF=400mA, tr=100ns

1.5

V

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