CMPT5401 datasheet(1/2 Pages) CENTRAL

No. de pieza	CMPT5401

Descripción Electrónicos	PNP SILICON TRANSISTOR

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Fabricante Electrónico	CENTRAL [Central Semiconductor Corp]

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Central

Semiconductor Corp.

TM

184

CMPT5401

PNP SILICON TRANSISTOR

SOT-23 CASE

DESCRIPTION:

The

CENTRAL

SEMICONDUCTOR

CMPT5401 type is an PNP silicon transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for high voltage amplifier applications.

Marking Code is C2L.

MAXIMUM RATINGS (TA=25

oC)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

160

V

Collector-Emitter Voltage

VCEO

150

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

500

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

oC

Thermal Resistance

ΘJA

357

oC/W

ELECTRICAL CHARACTERISTICS (TA=25

oC unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=100V

50

nA

ICBO

VCB=100V, TA=150

oC

50

µA

BVCBO

IC=100µA

160

V

BVCEO

IC=1.0mA

150

V

BVEBO

IE=10µA

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.2

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.5

V

VBE(SAT)

IC=10mA, IB=1.0mA

1.0

V

VBE(SAT)

IC=50mA, IB=5.0mA

1.0

V

hFE

VCE=5.0V, IC=1.0mA

50

hFE

VCE=5.0V, IC=10mA

60

240

hFE

VCE=5.0V, IC=50mA

50

fT

VCE=10V, IC=10mA, f=100MHz

100

300

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

6.0

pF

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CMPT5401 Datasheet(PDF) 1 Page - Central Semiconductor Corp

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