CMPTA29

SURFACE MOUNT

HIGH VOLTAGE

NPN SILICON

DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTA29 is an

NPN silicon darlington transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for applications requiring

extremely high voltage and high gain.

MARKING CODE: C29

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCES

100

V

Emitter-Base Voltage

VEBO

12

V

Continuous Collector Current

IC

500

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C) unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICES

VCE=80V

500

nA

ICBO

VCB=80V

100

nA

IEBO

VBE=10V

100

nA

BVCES

IC=100µA

100

V

BVCBO

IC=100µA

100

V

BVEBO

IE=10µA

12

V

VCE(SAT)

IC=10mA, IB=10µA

1.2

V

VCE(SAT)

IC=100mA, IB=100µA

1.5

V

VBE(ON)

VCE=5.0V, IC=100mA

2.0

V

hFE

VCE=5.0V, IC=10mA

10,000

hFE

VCE=5.0V, IC=100mA

10,000

fT

VCE=5.0V, IC=10mA, f=100MHz

125

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

8.0

pF

SOT-23 CASE

R4 (3-February 2010)

www.centra lsemi.com