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MAC310 Datasheet(PDF) 1 Page - Digitron Semiconductors

No. de pieza MAC310
Descripción Electrónicos  SILICON BIDIRECTIONAL THYRISTORS
PDF  2 Pages
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Fabricante Electrónico  DIGITRON [Digitron Semiconductors]
Página de inicio  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

MAC310 Datasheet(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
MAC310(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, ½ sine wave, 50 to 60Hz, gate open)
MAC310-4, MAC310A-4
MAC310-6, MAC310A-6
MAC310-8, MAC310A-8
VDRM
200
400
600
Volts
RMS on-state current (Full cycle sine wave, 50 to 60Hz, TC = 80°C)
IT(RMS)
10
Amps
Peak non-repetitive surge current
(1 cycle, 60Hz, TJ = 110°C)
ITSM
100
Amps
Circuit fusing considerations (t = 8.3ms)
I2t
40
A2s
Peak gate current (t ≤ 2µs)
IGM
±2
Amps
Peak gate voltage (t ≤ 2µs)
VGM
±10
Volts
Peak gate power (t ≤ 2µs)
PGM
20
Watts
Average gate power (TC = 80°C, t ≤ 8.3ms)
PG(AV)
0.5
Watts
Operating junction temperature range
TJ
-40 to +110
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque
8
In. lb.
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
R
ӨJC
2.2
°C/W
Thermal resistance, junction to ambient
R
ӨJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Symbol
Min
Typ.
Max
Unit
Peak blocking current
(VD = Rated VDRM, gate open, TJ = 25°C)
(VD = Rated VDRM, gate open, TJ = 110°C)
IDRM
-
-
-
-
10
2
mA
mA
Peak on-state voltage
(ITM = 14A peak, pulse width ≤ 2ms, duty cycle ≤ 2%.)
VTM
-
-
2.0
Volts
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
IGT
-
-
-
-
5
10
mA
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
(VD = Rated VDRM, RL = 10kΩ, TC = 110°C)
All Types
VGT
-
-
0.2
-
-
-
2.0
2.5
-
Volts
Holding current
(VD = 12V, ITM = 200mA, gate open)
IH
-
-
15
mA
Gate controlled turn-on time
(VD = Rated VDRM, ITM = 14A, IG = 30mA)
tgt
-
1.5
-
µs
Critical rate of rise of off-state voltage
(VD = Rated VDRM, exponential waveform, TC = 110°C)
dv/dt
-
25
-
V/µs
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130213


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