2SD1782

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-107.a



°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

80

V

Collector-Emitter Voltage

80

V

Emitter-Base Voltage

5

V

Collector Current

0.5

A

Collector Power Dissipation

0.2

W

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

80

V

Collector-Emitter Breakdown Voltage

80

V

Emitter-Base Breakdown Voltage

5

V

Collector Cutoff Current

0.5

µA

Emitter Cutoff Current

0.5

µA

Collector-Emitter Saturation Voltage

0.2

0.5

V

DC Current Transfer Ratio

120

390

Transition Frequency

120

MHz

Output Capacitance

Cob

7.5

pF



RANK

Q

R

RANGE

120~270

180~390