UD4606ZG-S08-R datasheet(1/6 Pages) UTC

No. de pieza	UD4606ZG-S08-R

Descripción Electrónicos	DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UD4606Z

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 6

QW-R502-763.a

DUAL ENHANCEMENT MODE

(N-CHANNEL/P-CHANNEL)

DESCRIPTION

The UTC UD4606Z is a dual enhancement mode Power

MOSFET using UTC perfect trench technology to provide customers

with advanced RDS(ON) and low gate charge. This device has ESD

protection function.

These complementary MOSFETs can be used to form a level

shifted high side switch and for other applications.

FEATURES

* N-Channel: 30V/6.9A

RDS(ON)=22.5mΩ (TYP.) (VGS=10V)

RDS(ON)=34.5mΩ ((TYP.) (VGS=4.5V)

*P-Channel: -30V/-6A

RDS(ON)=28mΩ(TYP.) (VGS=-10V )

RDS(ON)=44mΩ(TYP.) (VGS=-4.5V)

* Reliable and rugged

* ESD protection

SYMBOL

(2)

G1

(7)(8)

D1

S1

(1)

S2

(3)

(4)

G2

(5)(6)

D2

N-Channel

P-Channel

ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free Plating

Halogen Free

1

2

3

4

5

6

7

8

UD4606ZL-S08-R

UD4606ZG-S08-R

SOP-8

S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel

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VBsemi Electronics Co.,...	UD4606Z	2Mb / 14P	N- and P-Channel 30 V (D-S) MOSFET
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UD4606ZG-S08-R Datasheet(PDF) 1 Page - Unisonic Technologies

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