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12N30L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza 12N30L-TN3-R
Descripción Electrónicos  12A, 300V N-CHANNEL POWER MOSFET
PDF  5 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

12N30L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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12N30
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-787.a
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
300
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (TC=25°C)
ID
12
A
Pulsed (Note 2)
IDM
48
A
Single Pulsed Avalanche Energy
EAS
474
mJ
Power Dissipation
PD
83
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. Starting TJ=25°C, IAS=12A, VDD=50V, L=6.58mH.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
1.5
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
300
V
Drain-Source Leakage Current
IDSS
VDS=300V, VGS=0V
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=12A
0.34 0.47
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
3000 pF
Output Capacitance
COSS
900
pF
Reverse Transfer Capacitance
CRSS
400
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDD=150V, VGS=10V, ID=12A
(Note 1, 2)
24
nC
Gate-Source Charge
QGS
5
nC
Gate-Drain Charge
QGD
5.6
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=12A, RG=25Ω
(Note 1, 2)
30
50
ns
Rise Time
tR
105 150
ns
Turn-OFF Delay Time
tD(OFF)
480 750
ns
Fall-Time
tF
140 200
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=12A, VGS=0V
1.4
V
Maximum Body-Diode Continuous Current
IS
12
A
Maximum Body-Diode Pulsed Current
ISM
48
A
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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