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UTT20N06G-TQ2-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UTT20N06G-TQ2-R
Descripción Electrónicos  20A, 60V N-CHANNEL POWER MOSFET
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT20N06G-TQ2-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UTT20N06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-708.C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
20
A
Pulsed
IDM
80
A
Single Pulsed Avalanche Energy
EAS
170
mJ
Power Dissipation
TO-220/TO-263
PD
89
W
TO-252
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220/TO-263
θJA
62
°C/W
TO-252
110
Junction to Case
TO-220/TO-263
θJC
1.4
°C/W
TO-252
2.5
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
60
V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
1
µA
VDS=48V, VGS=0V, TC=125°C
10
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+16V, VDS=0V
+100
nA
Reverse
VGS=-16V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
37.5
46
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
725 1015
pF
Output Capacitance
COSS
213
300
pF
Reverse Transfer Capacitance
CRSS
58
120
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=30V, ID=20A,
IG=3.33mA
21.2
30
nC
Gate to Source Charge
QGS
5.6
nC
Gate to Drain Charge
QGD
7.3
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=1A, RG=25Ω,
VGS=10V
9.5
ns
Rise Time
tR
60.5 120
ns
Turn-OFF Delay Time
tD(OFF)
27.1
ns
Fall-Time
tF
37.1
80
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
20
A
Maximum Body-Diode Pulsed Current
ISM
80
A
Drain-Source Diode Forward Voltage
VSD
IS=20A, VGS=0V
1.2
V



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