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UTT75N08G-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UTT75N08G-TN3-R
Descripción Electrónicos  75A, 80V N-CHANNEL POWERTRENCH MOSFET
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT75N08G-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UTT75N08
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-769.d
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
75
A
Pulsed (Note 1)
IDM
300
A
Single Pulsed Avalanche Energy (Note 2)
EAS
185
mJ
Power Dissipation
TO-220
PD
125
W
TO-220F1
40
W
TO-252
50
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220/TO-220F1
θJA
62.5
°C/W
TO-252
110
°C/W
Junction to Case
TO-220
θJC
1
°C/W
TO-220F1
3.2
TO-252
2.5
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
80
V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.4
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=75A
21
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
4152 5522
pF
Output Capacitance
COSS
485
728
pF
Reverse Transfer Capacitance
CRSS
89
118
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=0~10V, VDD=50V, ID=75A
49
69
nC
Gate to Source Charge
QGS
VDD=50V, ID=75A
23
nC
Gate to Drain Charge
QGD
VDD=50V, ID=75A
16
nC
Turn-ON Delay Time
tD(ON)
VDD=50V, ID=75A, VGS=10V,
RGS=5.0Ω
43
95
ns
Rise Time
tR
212
434
ns
Turn-OFF Delay Time
tD(OFF)
272
556
ns
Fall-Time
tF
147
303
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=75A
1.25
V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. L = 0.13mH, IAS = 75A, VDD = 80V, RG = 25Ω, Starting TJ = 25°C



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