MTP3LP01S3 datasheet(2/9 Pages) CYSTEKEC

2 / 9 page

CYStech Electronics Corp.

Spec. No. : 794N3

Issued Date : 2011.03.14

Revised Date : 2013.09.09

Page No. : 2/ 9

MTP3LP01S3

CYStek Product Specification

Absolute Maximum Ratings (Ta=25

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

±10

Continuous Drain Current

-230

Pulsed Drain Current (Note 1)

IDM

-920

Maximum Power Dissipation (Note 2)

200

Thermal Resistance, Junction-to-Ambient

Rth,ja

625

°C/W

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : 1. Pulse width≤ 10μs, duty cycle≤1%.

2. When mounted on a glass epoxy with a dimension of 100mm²×1mm.

Electrical Characteristics (Ta=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

-30

VGS=0V, ID=-250μA

VGS(th)

-0.6

0.9

-1.1

VDS=-10V, ID=-100μA

GFS

100

210

VDS=-10V, ID=-100mA

IGSS

μA

VGS=±8V, VDS=0

-1

VDS=-30V, VGS=0

IDSS

-10

μA

VDS=-24V, VGS=0; Tj=125°C

VGS=-4V, ID=-100mA

4.6

VGS=-2.5V, ID=-30mA

*RDS(ON)

10.9

VGS=-1.5V, ID=-1mA

Dynamic

Ciss

35.7

Coss

11.9

Crss

3.7

VDS=-20V, VGS=0, f=1MHz

*td(ON)

26.4

*tr

12.8

*td(OFF)

31.5

*tf

46.4

VDS=-15V, ID=-100mA, VGS=-4V,

RL=150Ω, RG=50Ω

*Qg

0.78

*Qgs

0.1

*Qgd

0.1

VDS=-10V, ID=-100mA, VGS=-10V

Source-Drain Diode

*IS

-230

*ISM

-920

*VSD

0.83

-1.2

VGS=0V, IS=-100mA

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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