IXTY3N60P datasheet(2/4 Pages) IXYS

2 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 3N60P IXTP 3N60P

IXTY 3N60P

Symbol

Test Conditions

Characteristic Values

J = 25° C unless otherwise specified)

Min.

Typ.

Max.

DS= 20 V; ID = 0.5 ID25, Note 1

2.2

3.4

iss

411

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

rss

6.4

d(on)

GS = 10 V, VDS = 0.5 VDSS, ID = ID25

d(off)

G = 30 Ω (External)

g(on)

9.8

GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

3.4

3.5

thJC

1.80

° C/W

thCS

(TO-220)

0.25

° CW

Source-Drain Diode

Characteristic Values

J = 25° C unless otherwise specified)

Symbol

Test Conditions

Min.

Typ.

Max.

GS = 0 V

Repetitive

F = IS, VGS = 0 V, Note 1

1.5

F = 3 A, -di/dt = 100 A/µs

500

R = 100 V, VGS = 0 V

Note 1: Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or more of the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478 B2

TO-263 (IXTA) Outline

TO-220 (IXTP) Outline

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Dim.

Millimeter

Inches

Min. Max.

Min.

Max.

2.19

2.38

0.086

0.094

0.89

1.14

0.035

0.045

0.13

0.005

0.64

0.89

0.025

0.035

0.76

1.14

0.030

0.045

5.21

5.46

0.205

0.215

0.46

0.58

0.018

0.023

0.46

0.58

0.018

0.023

5.97

6.22

0.235

0.245

4.32

5.21

0.170

0.205

6.35

6.73

0.250

0.265

4.32

5.21

0.170

0.205

2.28 BSC

0.090 BSC

4.57 BSC

0.180 BSC

9.40 10.42

0.370

0.410

0.51

1.02

0.020

0.040

0.64

1.02

0.025

0.040

0.89

1.27

0.035

0.050

2.54

2.92

0.100

0.115

TO-252 (IXTY) Outline

Pins: 1 - Gate

3 - Source

4 - Drain

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